Article

Short Communications
2019. V. 57. № 2. P. 272–274
Kostanovskii A.V., Zeodinov M.G., Kostanovskaya M.E., Pronkin A.A.
Emittance properties of siliconized silicon carbide in the temperature range of $1400$–$2200$ K
Annotation
The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of $1400$–$2200$ K are presented for the first time.
Article reference:
Kostanovskii A.V., Zeodinov M.G., Kostanovskaya M.E., Pronkin A.A. Emittance properties of siliconized silicon carbide in the temperature range of $1400$–$2200$ K, High Temp., 2019. V. 57. № 2. P. 272