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Article

Plasma Investigations
2017. V. 55. № 6. P. 841–843
Dyrenkov A.V., Smirnov B.M., Tereshonok D.V.
Generation of a metal porous film by arc discharge
Annotation
The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters at optimal conditions (at a distance of 2 mm from the discharge) is about 0.5μm, and the deposition density is 3–5 clusters per squared μm.
Article reference:
Dyrenkov A.V., Smirnov B.M., Tereshonok D.V. Generation of a metal porous film by arc discharge, High Temp., 2017. V. 55. № 6. P. 841