Article

Plasma Investigations
2017. V. 55. № 6. P. 841–843
Dyrenkov A.V., Smirnov B.M., Tereshonok D.V.
Generation of a metal porous film by arc discharge
Annotation
The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters at optimal conditions (at a distance of $2$ mm from the discharge) is about $0.5\,\mu$m, and the deposition density is $3$–$5$ clusters per squared $\mu$m.
Article reference:
Dyrenkov A.V., Smirnov B.M., Tereshonok D.V. Generation of a metal porous film by arc discharge, High Temp., 2017. V. 55. № 6. P. 841